IPS825-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25
℃
unless otherwise specified)
IPS825-xxB
Symbol
Test Condition
40
Required DC gate current to trigger at 25℃
at - 40℃
at 125℃
Required DC voltage to trigger
at 25℃
(anode supply = 6V, resistive load) at - 40℃
at 125℃
DC gate voltage not to trigger
40
100
15
1.5
2.5
1.0
0.2
80
60
500
Unit
I
GT
MAX
mA
V
GT
MAX
V
V
GD
I
L
I
H
dV/dt
(
Tj = 125℃, V
DRM
= rated value)
I
G =
1.2 I
GT
Holding current
V
D
= 67% V
DRM
gate open Tj = 125
℃
MAX
MAX
MAX
MIN
V
mA
mA
V/us
STATIC CHARACTERISTICS
Symbol
V
TM
Test Conditions
I
TM
= 50A, tp = 380uS
V
D
= V
DRM
Tj = 25℃
Tj = 25℃
Tj = 125℃
Value
(MAX)
1.6
10
4
Unit
V
uA
mA
I
DRM /
I
RRM
V
R
= V
RRM
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case for DC
TO-220B
Value
1.0
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS [ IP SEMICONDUCTOR CO., LTD. ]
