IPT0806-xxF
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
IPT0806-xxF
Symbol
I
GT
Test Condition
Quadrant
SE
I – II – III
MAX
MAX
MIN
25
MAX
II
30
MAX
MIN
15
40
5.4
MIN
2.8
-
60
35
500
-
-
4.5
80
50
1000
-
-
7.0
10
CE
35
1.3
0.2
50
70
BE
50
Unit
mA
V
V
V
D
= 12V R
L
= 33Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT
I
T
= 500mA
I – II – III
I – II – III
I – III
I
L
I
H
dV/dt
mA
mA
V/us
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 17A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 125
℃
Tj = 125
℃
Tj = 125
℃
Value(MAX)
1.55
5
1
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
1.6
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2
IPS [ IP SEMICONDUCTOR CO., LTD. ]
