IPT20Q06-xxA
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
Symbol
I
GT
V
D
= 12V R
L
= 30Ω
V
GT
V
GD
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G
= 1.2 I
GT
II
I
H
dV/dt
I
T
= 100mA
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c = 0.1V/us Tj = 125
℃
(dI/dt)c
(dV/dt) c = 10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
MAX
MIN
Test Condition
Quadrant
I – II – III
IV
ALL
ALL
I – III – IV
MAX
MAX
MIN
IPT20Q06-xxA
TE
SE
10
1.3
0.2
30
MAX
40
25
40
8.5
3.0
80
35
200
40
CE
25
50
Unit
mA
V
V
I
L
mA
mA
V/us
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 28A, tp = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 25
℃
Tj = 25
℃
Tj = 125
℃
Value (MAX)
1.65
20
3
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
2.1
Unit
℃/W
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70 - 7574 - 2839, Fax : +82-2-6280-6382, sales@ipsemiconductor.com
2