IPT4006-xxH
ELECTRICAL CHARACTERISTICS
(Tj = 25
℃
unless otherwise specified)
Symbol
I
GT
V
GT
V
GD
Test Condition
V
D
= 12V R
L
= 33Ω
Tj = 25
℃
V
D
=V
DRM,
R
L
=3.3KΩ,
Tj = 125
℃
I
G =
1.2 I
GT,
Tj = 125
℃
I
T =
500mA Gate open
V
D
= 67% V
DRM
gate open Tj = 125
℃
(dV/dt) c=0.1V/us Tj = 125
℃
Quadrant
I – II – III
I – II – III
I – II – III
I – III
IPT4006-xx0H
MAX
MAX
MIN
50
1.3
0.2
80
MAX
Unit
mA
V
V
I
L
I
H
dV/dt
mA
160
80
1000
-
mA
V/us
II
MAX
MIN
(dI/dt)c
(dV/dt) c=10V/us Tj = 125
℃
Without snubber Tj = 125
℃
MIN
-
-
A/ms
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
Test Conditions
I
TM
= 28A, t p = 380uS
V
D
= V
DRM
V
R
= V
RRM
Tj = 25
℃
Tj = 25
℃
Tj = 125
℃
Value (MAX)
1.55
20
5
Unit
V
uA
mA
THERMAL RESISTANCES
Symbol
R
th
(j – c)
Parameter
Junction to case (AC)
Value
1.2
Unit
℃/W
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