30CTH02, 30CTH02S, 30CTH02-1, 30CTH02FP
Bulletin PD-20768 rev. C
09/04
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameters
V
BR
, V
r
V
F
Breakdown Voltage,
Blocking Voltage
Forward Voltage
Min Typ Max Units Test Conditions
200
-
-
-
-
V
V
V
µA
µA
pF
nH
I
R
= 100µA
I
F
= 15A, T
J
= 25°C
I
F
= 15A, T
J
= 125°C
V
R
= V
R
Rated
T
J
= 125°C, V
R
= V
R
Rated
V
R
= 200V
Measured lead to lead 5mm from package body
0.92 1.05
0.78 0.85
-
5
57
8
10
300
-
-
I
R
Reverse Leakage Current
-
-
C
T
L
S
Junction Capacitance
Series Inductance
-
-
Dynamic Recovery Characteristics @ T
C
= 25°C (unless otherwise specified)
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
-
-
-
26
40
2.8
6.0
37
120
35
30
-
-
-
-
-
-
nC
A
ns
I
F
= 1A, di
F
/dt = 50A/µs, V
R
= 30V
I
F
= 1A, di
F
/dt = 100A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 15A
di
F
/dt = 200A/µs
V
R
= 160V
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
T
J
T
Stg
R
thJC
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance,
Junction to Case
Device Marking
- 65
Per Diode
Fullpack (Per Diode)
Min
-
-
-
-
Typ
-
175
-
-
30CTH02
30CTH02S
30CTH02-1
30CTH02FP
Max
175
1.1
3.5
Units
°C
°C/W
Case Style TO-220
Case Style D
2
Pak
Case Style TO-262
Case Style Fullpack
Mounting Surface, Flat, Smooth and Greased
2
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