Bulletin PD-20748 rev. D 08/01
30ETH06
30ETH06S
30ETH06-1
Hyperfast Rectifier
Features
•
•
•
•
•
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
175°C Operating Junction Temperature
Dual Diode Center Tap
t
rr
= 28ns typ.
I
F(AV)
= 30Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop,
Hyperfast recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
Peak Repetitive Reverse Voltage
Average Rectifier Forward Current
Non Repetitive Peak Surge Current
@ T
C
= 103°C
@ T
J
= 25°C
Max
600
30
200
- 65 to 175
Units
V
A
°C
Operating Junction and Storage Temperatures
Case Styles
30ETH06
30ETH06S
30ETH06-1
Base
Cathode
Base
Cathode
2
2
1
3
1
3
1
3
Cathode
Anode
N/C
Anode
N/C
Anode
TO-220AC
www.irf.com
D
2
PAK
TO-262
1
IRF [ INTERNATIONAL RECTIFIER ]
