Data Sheet No. PD60163-P
IR2109(4)
(S)
HALF-BRIDGE DRIVER
Features
•
Floating channel designed for bootstrap operation
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Product Summary
V
OFFSET
I
O
+/-
V
OUT
t
on/off
(typ.)
Dead Time
600V max.
120 mA / 250 mA
10 - 20V
750 & 200 ns
540 ns
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout for both channels
3.3V, 5V and 15V input logic compatible
Cross-conduction prevention logic
Matched propagation delay for both channels
High side output in phase with IN input
Logic and power ground +/- 5V offset.
Internal 540ns dead-time, and programmable
up to 5us with one external R
DT
resistor (IR21094)
Lower di/dt gate driver for better noise immunity
Shut down input turns off both channels.
(programmable up to 5uS for IR21094)
Packages
14 Lead SOIC
Description
The IR2109(4)(S) are high voltage, high speed power
MOSFET and IGBT drivers with dependent high and
8 Lead SOIC
low side referenced output channels. Proprietary HVIC
14 Lead PDIP
and latch immune CMOS technologies enable rugge-
dized monolithic construction. The logic input is
compatible with standard CMOS or LSTTL output,
8 Lead PDIP
down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the
high side configuration which operates up to 600 volts.
Typical Connection
up to 600V
V
CC
V
CC
IN
SD
V
B
HO
V
S
LO
TO
LOAD
IN
SD
COM
up to 600V
IR21094
IR2109
HO
V
CC
IN
SD
V
CC
IN
SD
DT
V
SS
R
DT
V
SS
COM
LO
V
B
V
S
TO
LOAD
(Refer to Lead Assignments for correct
configuration). This/These diagram(s) show
electrical connections only. Please refer to our
Application Notes and DesignTips for proper
circuit board layout.
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