IRF1404PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
-
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
-
-
+
R
G
•
•
•
•
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
+
-
V
DD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V
GS
=10V
*
D.U.T. I
SD
Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V
DS
Waveform
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Inductor Curent
Body Diode
Forward Drop
Ripple
≤
5%
I
SD
*
V
GS
= 5V for Logic Level Devices
Fig 17.
For N-channel
HEXFET
®
Power MOSFETs
8
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