IRF7304
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
-0.70
4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, ID = -250µA
-0.012 ––– V/°C Reference to 25°C, I
D
= -1mA
––– 0.090
V
GS
= -4.5V, I
D
= -2.2A
Ω
––– 0.140
V
GS
= -2.7V, I
D
= -1.8A
––– –––
V
V
DS
= V
GS
, I
D
= -250µA
––– –––
S
V
DS
= -16V, I
D
= -2.2A
––– -1.0
V
DS
= -16V, V
GS
= 0V
µA
––– -25
V
DS
= -16V, V
GS
= 0V, T
J
= 125°C
––– -100
V
GS
= -8.0V
nA
––– 100
V
GS
= 8.0V
––– 22
I
D
= -2.2A
––– 3.3
nC V
DS
= -16V
––– 9.0
V
GS
= -4.5V, See Fig. 6 and 12
8.4 –––
V
DD
= -10V
26 –––
I
D
= -2.2A
ns
51 –––
R
G
= 6.0Ω
33 –––
R
D
= 4.5Ω, See Fig. 10
4.0
6.0
610
310
170
–––
nH
–––
–––
–––
–––
Between lead tip
and center of die contact
V
GS
= 0V
V
DS
= -15V
ƒ = 1.0MHz, See Fig. 5
pF
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 1.8
MOSFET symbol
showing the
A
––– ––– -14
integral reverse
p-n junction diode.
––– ––– -1.0
V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
––– 56
84
ns
T
J
= 25°C, I
F
= -2.2A
––– 71 110
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
I
SD
≤
-2.2A, di/dt
≤−
50A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C
Repetitive rating; pulse width limited by max. junction
temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
128
IRF [ INTERNATIONAL RECTIFIER ]
