PD – 91747C
IRF7807/IRF7807A
HEXFET
®
Chip-Set for DC-DC Converters
•
•
•
•
N Channel Application Specific MOSFETs
Ideal for Mobile DC-DC Converters
Low Conduction Losses
Low Switching Losses
S
S
S
G
1
8
7
A
D
D
D
D
2
3
6
Description
These new devices employ advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make them
ideal for high efficiency DC-DC Converters that power
the latest generation of mobile microprocessors.
A pair of IRF7807 devices provides the best cost/
performance solution for system voltages, such as 3.3V
and 5V.
4
5
SO-8
T o p V ie w
Device Features
IRF7807 IRF7807A
Vds
30V
30V
Rds(on) 25mΩ
25mΩ
Qg
17nC
17nC
Qsw
5.2nC
Qoss
16.8nC 16.8nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
25°C
70°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed source Current
T
J
, T
STG
I
S
I
SM
2.5
66
25°C
70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
8.3
6.6
66
2.5
1.6
–55 to 150
2.5
66
°C
A
IRF7807
30
±12
8.3
6.6
66
W
A
IRF7807A
Units
V
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
R
θJA
Max.
50
Units
°C/W
www.irf.com
1
10/10/00
IRF [ INTERNATIONAL RECTIFIER ]
