PD - 93810
PD - 93811
IRF7809A/IRF7811A
IRF7809A/IRF7811A
PROVISIONAL DATASHEET
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
HEXFET
®
Chipset for DC-DC Converters
S
S
S
G
1
8
7
A
A
D
D
D
D
2
Description
These new devices employ advanced HEXFET
®
Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge. The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
synchronous buck converters including R
DS(on)
, gate charge
and Cdv/dt-induced turn-on immunity. The IRF7809A offers
particulary low R
DS(on)
and high Cdv/dt immunity for
synchronous FET applications. The IRF7811A offers an
extremely low combination of Q
sw
& R
DS(on)
for reduced
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
3
6
4
5
SO-8
T o p V ie w
DEVICE RATINGS
IRF7809A
V
DS
R
DS
(on)
Q
G
Q
sw
Q
oss
30V
8.5 mΩ
73 nC
22.5 nC
30 nC
IRF7811A
28V
12 mΩ
23 nC
7 nC
31 nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
T
A
= 25°C
T
L
= 90°C
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
R
θJA
R
θJL
Max.
50
25
Units
°C/W
°C/W
T
J
, T
STG
I
S
I
SM
2.5
50
T
A
= 25°C
T
L
= 90°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
14.5
14.2
100
2.5
2.4
–55 to 150
2.5
50
°C
A
IRF7809A
30
±12
11.4
11.2
100
W
A
IRF7811A
28
Units
V
www.irf.com
1
01/19/00
IRF [ INTERNATIONAL RECTIFIER ]
