PD-95265
IRF7811AVPbF
IRF7811AVPbF
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
• 100% R
G
Tested
• Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters
that are critical in synchronous buck converters including
R
DS(on)
, gate charge and Cdv/dt-induced turn-on immunity.
The IRF7811AV offers an extremely low combination of
Q
sw
& R
DS(on)
for reduced losses in both control and
synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
•
•
•
•
•
S
S
S
G
1
8
7
A
A
D
D
D
D
2
3
6
4
5
SO-8
Top View
DEVICE CHARACTERISTICS
IRF7811AV
11 mΩ
17 nC
6.7 nC
8.1 nC
R
DS(on)
Q
G
Q
SW
Q
OSS
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Output Current
(V
GS
≥
4.5V)
Pulsed Drain Current
T
A
= 25°C
T
L
= 90°C
= 25°C
= 90°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
I
S
I
SM
IRF7811AV
30
±20
10.8
11.8
100
2.5
3.0
-55 to 150
2.5
50
Units
V
A
T
Power Dissipation
eÃÃÃÃÃÃÃÃÃÃ
T
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
A
L
W
°C
A
Thermal Resistance
eh
Maximum Junction-to-Lead
hÃ
Maximum Junction-to-Ambient
Parameter
Symbol
R
θJA
R
θJL
Typ
–––
–––
Max
50
20
Units
°C/W
www.irf.com
1
08/17/04
IRF [ INTERNATIONAL RECTIFIER ]
