PD - 94579C
IRF7821
HEXFET
®
Power MOSFET
Applications
l
High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
Benefits
l
Very Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
V
DSS
30V
R
DS(on)
max
9.1mW@V
GS
= 10V
Q
g
(typ.)
9.3nC
S
S
S
G
1
2
3
4
8
7
A
A
D
D
D
D
6
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
± 20
13.6
11
100
2.5
1.6
0.02
-55 to + 155
Units
V
f
Power Dissipation
f
Power Dissipation
c
A
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
R
θJL
R
θJA
g
Junction-to-Ambient
fg
Junction-to-Drain Lead
Parameter
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 10
www.irf.com
1
05/23/07
IRF [ INTERNATIONAL RECTIFIER ]
