欢迎访问ic37.com |
会员登录 免费注册
发布采购

IRFP2907PBF 参数 Datasheet PDF下载

IRFP2907PBF图片预览
型号: IRFP2907PBF
PDF下载: 下载PDF文件 查看货源
内容描述: 汽车MOSFET ( VDSS = 75V , RDS ( ON) = 4.5米ヘ, ID = 209A ) [AUTOMOTIVE MOSFET (VDSS = 75V , RDS(on) = 4.5mヘ , ID = 209A)]
分类和应用: 晶体晶体管开关脉冲PC局域网
文件页数/大小: 10 页 / 204 K
品牌: IRF [ INTERNATIONAL RECTIFIER ]
 浏览型号IRFP2907PBF的Datasheet PDF文件第2页浏览型号IRFP2907PBF的Datasheet PDF文件第3页浏览型号IRFP2907PBF的Datasheet PDF文件第4页浏览型号IRFP2907PBF的Datasheet PDF文件第5页浏览型号IRFP2907PBF的Datasheet PDF文件第6页浏览型号IRFP2907PBF的Datasheet PDF文件第7页浏览型号IRFP2907PBF的Datasheet PDF文件第8页浏览型号IRFP2907PBF的Datasheet PDF文件第9页  
PD -95050
IRFP2907PbF
AUTOMOTIVE MOSFET
HEXFET
®
Power MOSFET
Typical Applications
Integrated Starter Alternator
42 Volts Automotive Electrical Systems
Lead-Free
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
G
D
V
DSS
= 75V
R
DS(on)
= 4.5mΩ
Benefits
S
I
D
= 209A†
Description
Specifically designed for Automotive applications, this
Stripe Planar design of HEXFET
®
Power MOSFETs
utilizes the lastest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 175°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
TO-247AC
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Max.
209†
148†
840
470
3.1
± 20
1970
See Fig.12a, 12b, 15, 16
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.32
–––
40
Units
°C/W
www.irf.com
1
2/26/04