PD - 97070
PDP SWITCH
Features
l
Advanced Process Technology
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l
Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l
Low Q
G
for Fast Response
l
High Repetitive Peak Current Capability for
Reliable Operation
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
Improved Ruggedness
l
Repetitive Avalanche Capability for Robustness
and Reliability
IRFP4227PbF
Key Parameters
200
240
21
130
175
D
D
V
DS
max
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
I
RP
max @ T
C
= 100°C
T
J
max
V
V
m:
A
°C
G
S
G
D
S
TO-247AC
D
S
G
Description
This
HEXFET
®
Power MOSFET
is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This
MOSFET
utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this
MOSFET
are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this
MOSFET
a highly efficient, robust and reliable device for PDP driving applications.
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
10lb in (1.1N m)
Max.
±30
65
46
260
130
330
190
2.2
-40 to + 175
300
Units
V
A
c
Repetitive Peak Current
g
W
W/°C
°C
x
x
N
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
f
Parameter
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
f
Notes
through
are on page 8
www.irf.com
1
2/6/06
IRF [ INTERNATIONAL RECTIFIER ]
