PD - 97322
IRFP4368PbF
Applications
l
High Efficiency Synchronous Rectification in
SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
max.
I
D (Silicon Limited)
I
D (Package Limited)
Benefits
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche SOA
l
Enhanced body diode dV/dt and dI/dt
Capability
S
75V
1.46mΩ
1.85mΩ
350Ac
195A
D
D
G
S
TO-247AC
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Wire Bond Limited)
Pulsed Drain Current
d
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
f
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
350c
250c
195
1280
520
3.4
± 20
13
-55 to + 175
300
10lbxin (1.1Nxm)
Units
A
W
W/°C
V
V/ns
°C
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
e
Avalanche Current
d
Repetitive Avalanche Energy
g
430
See Fig. 14, 15, 22a, 22b
mJ
A
mJ
Thermal Resistance
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Junction-to-Case
k
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
jk
Typ.
–––
0.24
–––
Max.
0.29
–––
40
Units
°C/W
www.irf.com
1
06/02/08
IRF [ INTERNATIONAL RECTIFIER ]
