IRFR/U3704
3000
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
10
I
D
=
28.4A
V
DS
= 10V
8
C, Capacitance (pF)
2000
Ciss
6
1500
C
oss
4
1000
500
2
C
rss
0
1
10
100
0
0
10
20
30
40
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10us
100
I
D
, Drain Current (A)
T
J
= 175
°
C
100
100us
10
T
J
= 25
°
C
1ms
10
1
10ms
0.1
0.2
V
GS
= 0 V
0.5
0.8
1.1
1.4
1.7
2.0
1
0.1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
1
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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