JANTX2N6800, JANTXV2N6800 Device
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min.
400
—
—
—
2.0
2.0
—
—
—
—
19.1
1.0
6.7
—
—
—
—
—
Typ. Max. Units
—
0.37
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
5.0
—
—
1.0
1.15
4.0
—
25
250
100
-100
33
5.8
19.9
30
35
55
35
—
V
V/°C
Ω
V
S( )
µA
nA
nC
Ω
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
VGS = 10V, ID = 2.0A
VGS = 10V, ID = 3.0A
VDS = VGS, ID = 250µA
VDS > 15V, IDS = 2.0A
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 10V, ID = 3.0A
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = 200V, ID = 3.0A,
RG = 7.5Ω, VGS = 10V
see figure 10
Measured from the
Modified MOSFET
drain lead, 6mm (0.25
symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
ns
LS
Internal Source Inductance
—
15
—
nH
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
620
200
75
—
—
—
pF
VGS = 0V, VDS = 25V
f = 1.0 MHz
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Min. Typ. Max. Units
—
—
—
—
3.0
12.0
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
A
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
1.4
700
6.2
V
ns
µC
T
j
= 25°C, IS = 3.0A, VGS = 0V
Tj = 25°C, IF = 3.0A, di/dt
≤
100A/µs
VDD
≤
50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min. Typ. Max. Units
—
—
—
—
5.0
175
K/W
Test Conditions
Typical socket mount
IRF [ INTERNATIONAL RECTIFIER ]
