Provisional Data Sheet No. PD-9.334E
HEXFET
®
JANTX2N6758
POWER MOSFET
JANTXV2N6758
[REF:MIL-PRF-19500/542]
[GENERIC:IRF230]
N-CHANNEL
Product Summary
Part Number
JANTX2N6758
JANTXV2N6758
BV
DSS
200V
R
DS(on)
0.40Ω
I
D
9A
200 Volt, 0.40Ω HEXFET
Ω
HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transis-
tors. The efficient geometry achieves very low on-
state resistance combined with high transconductance.
HEXFET transistors also feature all of the well-es-
tablish advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and
electrical parameter temperature stability. They are
well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifiers, and high energy pulse circuits, and virtu-
ally any application where high reliability is required.
Features:
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
ID @ V GS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6758, JANTXV2N6758
Units
9
6
36
75
0.60
±20
54
9
7.5
5.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
A
W
W/K
V
mJ
A
mJ
V/ns
o
C
g
IRF [ INTERNATIONAL RECTIFIER ]
