Provisional Data Sheet No. PD-9.335E
HEXFET
®
JANTX2N6760
POWER MOSFET
JANTXV2N6760
[REF:MIL-PRF-19500/542]
[GENERIC:IRF330]
N-CHANNEL
Product Summary
Part Number
JANTX2N6760
JANTXV2N6760
BV
DSS
400V
R
DS(on)
1.00Ω
I
D
5.5A
400 Volt, 1.00Ω HEXFET
Ω
HEXFET technology is the key to International Rectifier’s
advanced line of power MOSFET transistors. The effi-
cient geometry achieves very low on-state resistance
combined with high transconductance.
HEXFET transistors also feature all of the well-establish
advantages of MOSFETs, such as voltage control, very
fast switching, ease of paralleling and electrical param-
eter temperature stability. They are well-suited for appli-
cations such as switching power supplies, motor controls,
inverters, choppers, audio amplifiers, and high energy
pulse circuits, and virtually any application where high
reliability is required.
Features:
s
s
s
s
s
Avalanche Energy Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Absolute Maximum Ratings
Parameter
I D @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
JANTX2N6760, JANTXV2N6760
Units
5.5
3.5
22
75
0.60
±20
1.7
5.5
—
4.0
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10.5 seconds)
11.5 (typical)
A
W
W/K
V
mJ
A
mJ
V/ns
o
C
g
IRF [ INTERNATIONAL RECTIFIER ]
