PD -90433C
REPETITIVE A ALANCHE AND dv/dt RATED
V
HEXFET TRANSISTORS
THRU-HOLE (TO-205AF)
Product Summary
Part Number
IRFF430
BVDSS
500V
R
DS(on)
1.5Ω
I
D
2.5A
IRFF430
JANTX2N6802
JANTXV2N6802
REF:MIL-PRF-19500/557
500V, N-CHANNEL
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this latest
“State of the Art” design achieves: very low on-state resis-
tance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as volt-
age control, very fast switching, ease of parelleling
and temperature stability of the electrical parameters.
They are well suited for applications such as switch-
ing power supplies, motor controls, inverters, chop-
pers, audio amplifiers and high energy pulse circuits.
TO-39
Features:
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
I DM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
2.5
1.5
11
25
0.20
±20
0.35
—
—
3.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
W
W/°C
Units
A
V
mJ
A
mJ
V/ns
o
C
g
www.irf.com
1
01/22/01
IRF [ INTERNATIONAL RECTIFIER ]
