MBRS320
Bulletin PD-20645 rev. D 03/03
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
MBRS320
20
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
I
FSM
Max. Peak One Cycle Non-Repetitive
Surge Current
E
AS
I
AR
Non Repetitive Avalanche Energy
Repetitive Avalanche Current
Value
3.0
820
80
4
1.0
Units Conditions
A
50% duty cycle @ T
L
= 136°C, rectangular wave form
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
mJ
A
T
J
= 25 °C, I
AS
= 1.0A, L = 8mH
Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Following any rated
load condition and
with rated V
RRM
applied
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
(1)
Typ.
0.41
0.45
0.29
0.35
Max.
0.45
0.53
0.36
0.46
0.5
20
35
-
-
10000
Units
V
V
V
V
mA
mA
mA
pF
nH
Conditions
@ 3A
@ 6A
@ 3A
@ 6A
T
J
= 25 °C
T
J
= 100 °C
T
J
= 125 °C
V
R
= 5V
DC
(test signal range 100kHz to
1Mhz), @ 25°C
Measured lead to lead 5mm from package body
V
R
= rated V
R
T
J
= 25 °C
T
J
= 125 °C
I
RM
Max. Reverse Leakage Current (1)
0.04
8.0
23
C
T
L
S
Typical Junction Capacitance
Typical Series Inductance
360
3.0
-
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
V/ µs (Rated V
R
)
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Junction Temperature Range (*)
Max. Storage Temperature Range
Value
- 65 to 150
- 65 to 150
12
46
Units
°C
°C
Conditions
R
thJL
Max. Thermal Resistance Junction
to Lead
(**)
R
thJA
Max. Thermal Resistance Junction
to Ambient
Wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
°C/W DC operation
°C/W
0.24(0.008) gr (oz)
SMC
IR32
(**) Mounted 1 inch square PCB
Similar DO-214AB
thermal runaway condition for a diode on its own heatsink
2
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