IRF6602
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
20
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.022
10
14
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
13
V
GS
= 10V, I
D
= 11A
mΩ
19
V
GS
= 4.5V, I
D
= 8.8A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 16V, V
GS
= 0V
µA
125
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
200
V
GS
= 20V
nA
-200
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
g
Q
gs1
Q
gs2
Q
gd
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge Cont FET
Total Gate Charge Sync FET
Pre-Vth Gate-Source Charge
Post-Vth Gate-Source Charge
Gate to Drain Charge
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
13
11
3.5
1.3
4.8
6.1
19
11
58
15
5.5
1420
960
100
Max. Units
Conditions
–––
S
V
DS
= 10V, I
D
= 8.8A
20
V
GS
= 5.0V, V
DS
= 10V, I
D
= 8.8A
–––
V
GS
= 5.0V, V
DS
< 100mV
–––
V
DS
= 16V, I
D
= 8.8A
–––
nC
–––
–––
–––
V
DS
= 16V, V
GS
= 0V
–––
V
DD
= 15V
–––
I
D
= 8.8A
ns
–––
R
G
= 1.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
97
8.8
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
11
A
88
1.2
–––
62
77
64
82
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
––– 0.83
––– 0.65
––– 42
––– 51
––– 43
––– 55
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 8.8A, V
GS
= 0V
T
J
= 125°C, I
S
= 8.8A, V
GS
= 0V
T
J
= 25°C, I
F
= 8.8A, V
R
=15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 8.8A, V
R
=15V
di/dt = 100A/µs
2
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