Si4410DY
20
16
12
8
2400
I
D
= 10A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
= 24V
= 15V
C
= C + C
DS
DS
iss
gs
gd ,
C
= C
rss
gd
2000
1600
1200
800
400
0
C
= C + C
gd
oss
ds
C
iss
C
C
oss
4
rss
0
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
1
°
= 25 C
T
C
°
T
= 150 C
J
V
= 0 V
Single Pulse
GS
10ms
100
0.1
0.4
1
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1
10
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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