INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2N5108
DESCRIPTION
·High
Current-Gain Bandwidth Product
: f
T
= 1200MHz (Min) @V
CE
= 10V,I
E
= 50mA
·Low
Saturation Voltage
·Good
Linearity of h
FE
APPLICATIONS
·Designed
for general purpose Class C amplifier applications
up to 1 GHz
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
PARAMETER
VALUE
UNIT
V
CBO
Collector-Base Voltage
55
V
V
CEO
Collector-Emitter Voltage
35
V
V
EBO
Emitter-Base Voltage
4
V
I
C
Collector Current
Collector Power Dissipation
@T
C
=25℃
0.4
A
3.5
W
P
C
Collector Power Dissipation
@T
a
=25℃
T
j
Junction Temperature
1.0
175
℃
T
stg
Storage Temperature Range
-55~175
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
