Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・High
breakdown voltage
・High
power dissipation
APPLICATIONS
・Switching
regulator
・Inverters
・Power
amplifiers
・Deflection
circuits
・High-voltage
bridge amplifiers
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N5239
Fig.1 simplified outline (TO-3) and symbol
Collector
MAXIMUN RATINGS(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
300
225
6
5
2
100
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.75
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
