Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5294 2N5296 2N5298
DESCRIPTION
・With
TO-220 package
・High
power dissipation
APPLICATIONS
・Power
amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
2N5294
2N5296
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
SEM
NG
HA
C
2N5298
2N5294
2N5296
2N5298
Open emitter
ND
ICO
CONDITIONS
TOR
UC
VALUE
80
60
80
70
40
60
UNIT
V
Open base
V
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
7
4
2
V
A
A
W
℃
℃
T
C
=25℃
36
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.47
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
