Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5838 2N5839 2N5840
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・High
breakdown voltage
APPLICATIONS
・For
use in switching power supply and
other inductive switching circuits.
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
2N5838
2N5839
2N5840
2N5838
2N5839
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
ES
ANG
CH
2N5840
Open emitter
ND
ICO
EM
CONDITIONS
OR
UCT
VALUE
275
300
375
250
275
350
UNIT
V
Open base
V
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
6
3
V
A
W
℃
℃
T
C
=25℃
100
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.25
UNIT
℃/W