Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5883 2N5884
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5885 2N5886
・High
power dissipations
APPLICATIONS
・They
are intended for use in power linear
and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
IN
导�½�
半
PARAMETER
CONDITIONS
2N5883
Collector-base voltage
2N5884
Open emitter
V
CEO
Collector-emitter voltage
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
ES
ANG
CH
2N5883
2N5884
Open base
ICO
EM
OR
UCT
ND
VALUE
-60
-80
-60
-80
-5
-25
-50
-7.5
UNIT
V
V
Open collector
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
200
200
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
