Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N5629 2N5630
・High
power dissipations
APPLICATIONS
・For
high voltage and high power
amplifier applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6029 2N6030
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
电半
固
PARAMETER
导�½�
CONDITIONS
2N6029
Collector-base voltage
2N6030
Open emitter
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
HAN
INC
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
ES
G
2N6029
2N6030
Open base
ND
ICO
EM
OR
UCT
VALUE
-100
-120
-100
-120
-7
-16
-20
-5.0
UNIT
V
V
Open collector
V
A
A
A
W
℃
℃
T
C
=25℃
200
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
