Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type 2N6034/6035/6036
・DARLINGTON
・High
DC current gain
APPLICATIONS
・Designed
for general-purpose amplifier
and low-speed switching applications
PINNING(see Fig.2)
PIN
1
2
3
DESCRIPTION
Emitter
Collector
Base
2N6037 2N6038 2N6039
Absolute maximum ratings(Ta=
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
CONDITIONS
2N6037
2N6038
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
SEM
NG
HA
C
2N6039
2N6037
2N6038
2N6039
Open emitter
ND
ICO
TOR
UC
VALUE
40
60
80
40
60
80
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
Open collector
5
4
8
0.1
V
A
A
A
W
℃
℃
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
3.12
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
