Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220C package
・Complement
to type 2N6040/6041/6042
・DARLINGTON
・High
DC current gain
・Low
collector saturation voltage
・
APPLICATIONS
・For
general-purpose amplifier and
low-speed switching applications
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6043 2N6044 2N6045
Absolute maximum ratings(Tc=25
℃
)
SYMBOL
PARAMETER
CONDITIONS
2N6043
2N6044
固电
IN
导�½�
半
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
GS
AN
CH
2N6045
2N6043
2N6044
2N6045
Open emitter
MIC
E
ND
O
TOR
UC
VALUE
60
80
100
60
80
100
5
8
16
120
UNIT
V
Open base
V
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current-DC
Collector current-Peak
Base current-DC
Total power dissipation
Junction temperature
Storage temperature
Open collector
V
A
A
mA
W
℃
℃
T
C
=25℃
T
a
=25℃
75
2.2
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.67
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
