Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6107
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6109
2N6111
V
CEsat
V
BE
Collector-emitter saturation voltage
Base-emitter on voltage
2N6107
I
CEO
Collector cut-off current
2N6109
2N6111
2N6107
I
CEX
Collector cut-off current
2N6109
2N6111
I
EBO
Emitter cut-off current
2N6107
h
FE-1
DC current gain
2N6109
2N6111
h
FE-2
f
T
DC current gain
Transition frequency
I
C
=-7A;I
B
=-3A
I
C
=-7A ; V
CE
=-4V
V
CE
=-20V; I
B
=0
V
CE
=-40V; I
B
=0
V
CE
=-60V; I
B
=0
I
C
=-0.1A ;I
B
=0
2N6107 2N6109 2N6111
CONDITIONS
MIN
-30
-50
-70
TYP.
MAX
UNIT
V
-3.5
-3.0
V
V
-1.0
mA
V
CE
=-40V; V
BE
=-1.5V
V
CE
=-30V;
BE
=-1.5V,T
C
=125℃
V
CE
=-60V; V
BE
=-1.5V
V
CE
=-50V;
BE
=-1.5V,T
C
=125℃
V
CE
=-80V; V
BE
=-1.5V
V
CE
=-70V;
BE
=-1.5V,T
C
=125℃
V
EB
=-5V; I
C
=0
I
C
=-2A ; V
CE
=-4V
I
C
=-2.5A ; V
CE
=-4V
I
C
=-3A ; V
CE
=-4V
I
C
=-7A ; V
CE
=-4V
I
C
=-0.5A ; V
CE
=-4V;f=1MHz
2.3
10
30
-0.1
-2.0
-0.1
-2.0
-0.1
-2.0
-1.0
mA
mA
150
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
