Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N6226 2N6227 2N6228
DESCRIPTION
・With
TO-3 package
・Low
collector saturation voltage
・Excellent
safe operating area
APPLICATIONS
・For
high power audio;stepping motor
and other linear applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
2N6226
2N6227
2N6228
2N6226
2N6227
2N6228
CONDITIONS
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
GS
AN
CH
Open emitter
MIC
E
ND
O
TOR
UC
VALUE
-100
-120
-140
-100
-120
-140
UNIT
V
Open base
V
V
EBO
I
C
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Open collector
-7
-6
V
A
W
℃
℃
T
C
=25℃
150
150
-65~200
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.92
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
