Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6229 2N6230 2N6231
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6229
Collector-emitter
sustaining voltage
-100
V
CEO(SUS)
2N6230
I
C
=-0.2A ;I
B
=0
-120
V
2N6231
-140
V
CEsat
Collector-emitter saturation voltage
I
C
=-4A; I
B
=-0.4A
-1.0
V
V
BE
Base-emitter on voltage
I
C
=-5A ; V
CE
=-2V
-2.0
V
I
CEO
Collector cut-off current
V
CE
=Rated V
CEO
; I
B
=0
-5.0
mA
I
CBO
Collector cut-off current
I
EBO
固电
IN
Emitter cut-off current
导�½�
半
2N6229
2N6230
2N6231
V
CB
=Rated V
CBO
; I
E
=0
-1.0
mA
V
EB
=-7V; I
C
=0
h
FE
DC current gain
NG
HA
C
SEM
I
C
=-5A ; V
CE
=-2V
ND
ICO
TOR
UC
-0.1
25
100
20
80
15
60
mA
f
T
Transition frequency
I
C
=-0.5A ; V
CE
=-4V
1
MHz
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
