Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-220 package
・Low
collector saturation voltage
・Wide
safe operating area
APPLICATIONS
・For
medium power switching and
amplifier applications such as:series
and shunt regulators and driver and
output stages of high-fidelity amplifiers
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
2N6291 2N6293
Absolute maximum ratings(Ta=25
℃)
SYMBOL
PARAMETER
固电
导�½�
半
V
CBO
V
CEO
HAN
INC
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage
ES
G
2N6291
2N6293
2N6291
2N6293
Open emitter
MIC
E
CONDITIONS
ND
O
OR
UCT
VALUE
60
80
50
70
UNIT
V
Open base
V
V
EBO
I
C
I
B
P
T
T
j
T
stg
Open collector
5
7
3
V
A
A
W
℃
℃
T
C
=25℃
40
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
3.125
UNIT
℃/W