Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
·With
TO-3 package
·Low
collector saturation voltage
·High
DC current gain @I
C
=8A
APPLICATIONS
·Designed
for use in high power audio
amplifier applications and high voltage
switching regulator circuits
PINNING (See Fig.2)
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6302
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=25
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
T
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total power dissipation
Junction temperature
Storage temperature
T
c
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
140
140
7
16
20
5
150
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
0.875
UNIT
℃/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
