Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
·With
TO-66 package
·Low
collector saturation voltage
·Low
leakage current
APPLICATIONS
·Designed
for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6312 2N6313 2N6314
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6312
V
CBO
Collector-base voltage
2N6313
2N6314
2N6312
V
CEO
Collector-emitter voltage
2N6313
2N6314
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
-40
-60
-80
-40
-60
-80
-5
-5
-10
-2
75
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
2.32
UNIT
℃/W