Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N6648/6649/6650
・
DARLINGTON
・
High DC current gain
APPLICATIONS
・Designed
for low and medium frequency
power application such as power switching
audio amplifer ,hammer drivers and shunt
and series regulators
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N6383 2N6384 2N6385
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6383
V
CBO
Collector-base voltage
2N6384
2N6385
2N6383
V
CEO
Collector-emitter voltage
2N6384
2N6385
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
40
60
80
40
60
80
5
10
15
0.25
100
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
℃/W