Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION
・With
TO-220 package
・Excellent
safe operating area
・Complement
to type 2N6486 2N6487
2N6488 respectively
APPLICATIONS
・Power
amplifier and medium speed
switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
2N6489 2N6490 2N6491
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25
℃)
SYMBOL
固电
IN
导�½�
半
PARAMETER
CONDITIONS
2N6489
2N6490
V
CBO
Collector-base voltage
V
CEO
Collector-emitter voltage
ES
ANG
CH
2N6491
2N6489
2N6490
2N6491
Open emitter
ICO
EM
OR
UCT
ND
VALUE
-50
-70
-90
-40
-60
-80
UNIT
V
Open base
V
V
EBO
I
C
I
B
P
T
T
j
T
stg
Emitter-base voltage
Collector current
Base current
Total power dissipation
Junction temperature
Storage temperature
Open collector
-5
-15
-5
V
A
A
W
℃
℃
T
C
=25℃
75
150
-65~150
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance from junction to case
MAX
1.67
UNIT
℃/W