Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO
V
CEsat
I
CBO
I
EBO
h
FE
C
ob
f
T
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
CONDITIONS
I
C
=-25mA ; I
B
=0
B
2SA1215
MIN
-160
TYP.
MAX
UNIT
V
I
C
=-5A ;I
B
=-0.5A
B
-2.0
-100
-100
50
400
50
180
V
μA
μA
V
CB
=-160V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-5A ; V
CE
=-4V
I
E
=0 ; V
CB
=-10V;f=1MHz
I
C
=-2A ; V
CE
=-12V
pF
MHz
Switching times
t
on
t
s
t
f
Turn-on time
Storage time
Fall time
I
C
=-5A;R
L
=12Ω
I
B1
=-I
B2
=-0.5A
V
CC
=-60V
0.25
0.85
0.20
μs
μs
μs
h
FE
classifications
O
50-100
P
70-140
Y
90-180
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
