INCHANGE Semiconductor
isc
Product Specification
isc
Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
CE
(sat)
V
BE
(sat)
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
C
OB
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Current-Gain—Bandwidth Product
Output Capacitance
CONDITIONS
I
C
= -50mA ; I
B
= 0
I
C
= -6A; I
B
= -0.3A
B
2SA1328
MIN
-50
TYP.
MAX
UNIT
V
-0.4
-1.2
-10
-10
70
40
70
320
240
V
V
μA
μA
I
C
= -6A; I
B
= -0.3A
B
V
CB
= -60V ; I
E
= 0
V
EB
= -6V; I
C
= 0
I
C
= -1A ; V
CE
= -1V
I
C
= -6A ; V
CE
= -1V
I
C
= -1A ; V
CE
= -5V
I
E
= 0; V
CB
= -10V; f
test
= 1MHz
MHz
pF
Switching Times
t
on
t
stg
t
f
Turn-on Time
Storage Time
Fall Time
I
C
= -3A ,R
L
= 10Ω,
I
B1
= -I
B2
= -0.15A,V
CC
=
-30V
0.3
1.0
0.5
μs
μs
μs
h
FE-1
Classifications
O
70-140
Y
120-240
isc Website：www.iscsemi.cn
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
