INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistors
2SC3519/A
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
V
(BR)CEO
= 160V(Min)-2SC3519
= 180V(Min)-2SC3519A
·Good
Linearity of h
FE
·Complement
to Type 2SA1386/A
APPLICATIONS
·Designed
for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base
Voltage
V
CEO
Collector-Emitter
Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
2SC3519
160
V
2SC3519A
180
2SC3519
160
V
2SC3519A
180
5
V
15
A
4
A
130
W
℃
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
