INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4131
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 50V(Min)
·Low
Collector Saturation Voltage-
: V
CE(
sat
)
= 0.5V(Max)@ I
C
= 5A
APPLICATIONS
·Designed
for DC-DC converter, emergency lighting
inverter and general purpose applications
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current-Continuous
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
100
V
50
V
15
V
15
A
25
A
4
A
60
W
I
CP
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
P
C
T
J
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
