INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4381
DESCRIPTION
·Collector-Emitter
Breakdown Voltage-
: V
(BR)CEO
= 150V(Min)
·DC
Current Gain-
: h
FE
=
60(Min)@ (V
CE
= 10V, I
C
= 0.7A)
·Complement
to Type 2SA1667
APPLICATIONS
·Designed
for TV vertical output ,audio output driver and
general purpose applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base Voltage
w
.cn
i
em
cs
.is
w
w
VALUE
UNIT
150
V
150
V
6
V
2
A
1
A
25
W
℃
150
I
C
Collector Current-Continuous
I
B
Base Current-Continuous
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
P
C
T
J
T
stg
Storage Temperature
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
