INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
2SC4960
DESCRIPTION
·High
Collector-Base Breakdown Voltage-
: V
(BR)CBO
= 900V(Min)
·High
Switching Speed
APPLICATIONS
·Designed
for power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
V
CBO
Collector-Base Voltage
V
CES
Collector-Emitter Voltage
V
CEO
Collector-Emitter Voltage
V
EBO
Emitter-Base voltage
I
C
Collector Current-Continuous
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i
em
cs
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w
w
VALUE
UNIT
900
V
900
V
800
V
7
V
1
A
2
A
0.3
A
40
W
I
CM
Collector Current-Peak
I
B
B
Base Current-Continuous
Collector Power Dissipation
@ T
C
=25℃
P
C
Collector Power Dissipation
@ T
a
=25℃
T
J
Junction Temperature
3
150
℃
T
stg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
