Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
BE
I
CBO
I
EBO
h
FE-1
h
FE-2
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown votage
Collector-emitter saturation voltage
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
CONDITIONS
I
C
=50mA; R
BE
=∞
I
E
=5mA; I
C
=0
I
C
=0.5 A;I
B
=50m A
I
C
=50mA ; V
CE
=4V
V
CB
=120V; I
E
=0
V
EB
=4V; I
C
=0
I
C
=50mA ; V
CE
=4V
I
C
=0.5A ; V
CE
=10V
60
60
MIN
150
6
TYP.
2SD478
MAX
UNIT
V
V
3.0
1.0
1.0
1.0
320
V
V
μA
μA
h
FE-1
classifications
B
60-120
C
100-200
D
160-320
2
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
