Inchange Semiconductor
Product Specification
Silicon NPN Darligton Power Transistors
DESCRIPTION
・With
TO-126 package
・Complement
to type BD676/678/680
・DARLINGTON
・High
DC current gain
APPLICATIONS
・For
use as output devices in
complementary general–purpose
amplifier applications
PINNING
PIN
1
2
3
DESCRIPTION
Emitter
Collector;connected to
mounting base
Base
BD675/BD677/BD679
・
Absolute maximum ratings (Ta=25
℃)
SYMBOL
PARAMETER
BD675
V
CBO
Collector-base voltage
BD677
BD679
BD675
V
CEO
Collector-emitter voltage
BD677
BD679
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter -base voltage
Collector current
Collector current-Peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
45
60
80
45
60
80
5
4
7
0.1
40
150
-55~150
V
A
A
A
W
℃
℃
V
V
UNIT
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-mb
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
3.12
UNIT
K/W
K/W
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
