INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BDW93/A/B/C
DESCRIPTION
·Collector
Current -I
C
=
12A
·Collector-Emitter
Sustaining Voltage-
: V
CEO(SUS)
= 45V(Min)- BDW93; 60V(Min)- BDW93A
80V(Min)- BDW93B; 100V(Min)- BDW93C
·Complement
to Type BDW94/A/B/C
APPLICATIONS
·Designed
for hammer drivers, audio amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
PARAMETER
BDW93
Collector-Base
Voltage
BDW93A
BDW93B
BDW93C
BDW93
Collector-Emitter
Voltage
BDW93A
BDW93B
BDW93C
V
EBO
I
C
I
CM
I
B
B
VALUE
45
60
UNIT
V
CBO
V
80
100
45
60
V
80
100
5
12
15
0.2
80
150
-65~150
V
A
A
A
W
℃
℃
V
CEO
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Collector Power Dissipation
@ T
C
=25℃
Junction Temperature
Storage Temperature Range
P
C
T
J
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.5
UNIT
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
