INCHANGE Semiconductor
isc
Product Specification
isc
Silicon NPN Power Transistor
BUL416
DESCRIPTION
·Collector–Emitter
Sustaining Voltage
: V
CEO(SUS)
= 800V(Min.)
·Low
Collector Saturation Voltage
: V
CE(
sat
)
= 1.5V(Max) @ I
C
= 2A
·Very
High Switching Speed
APPLICATIONS
·Designed
for use in lighting applications and low cost switch-
mode power supplies.
ABSOLUTE MAXIMUM RATINGS(T
a
=25
℃)
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
B
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-peak t
p
<5ms
Base Current-Continuous
Base Current-peak t
p
<5ms
Collector Power Dissipation
T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
1600
800
9
6
9
5
8
110
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
I
BM
P
C
T
i
T
stg
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
R
th j-A
PARAMETER
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
MAX
1.14
62.5
UNIT
℃/W
℃/W
isc Website：www.iscsemi.cn
ISC [ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]
